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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

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Brand Name : Hamamatsu

Model Number : S2386-8K

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 3000/pcs/month

Delivery Time : 3-5work days

Packaging Details : Tube

Price : Negotiable

photographic area is : 5.8 × 5.8mm

Number of pixels : 1

Refrigeration and : Non - cooled

encapsulation type is : to-8

Reverse voltage (Max.) : 30V

Spectral response range : 320 to 1100 nm

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Product Description:

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

Features:

Suitable for visible light to near infrared band, universal photometric determination

Product features

● High sensitivity in visible to near infrared band

● Low dark current

● High reliability

● High linearity

Rise time (typical value). 10 mu s

Junction capacitance (typical value) 4300 pF

Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

spectral response range is 320 to 1100 nm
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.6 A/W
Dark current (Max.) 50 pA

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current


Product Tags:

S2386-8K Infrared Photoelectric Sensor

      

Infrared Photoelectric Sensor 10 mV

      

Silicon Carbide Photodiode

      
Quality S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current wholesale

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current Images

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